What Can DP Do too? | Deep Learning Modeling of Oxygen Redistribution and Thermal Transport in Silicon on Insulator and Buried Oxide Layers
In silicon-on-insulator (SOI) technology, the core challenge of the separation by implanted oxygen (SIMOX) process lies in precisely controlling the thickness and oxygen distribution of the buried oxide (BOX) layer and understanding cross-interface thermal transport behavior. Traditional methods often suffer from limited accuracy or efficiency in predicting oxygen diffusion dynamics, layer thickness evolution, and interfacial thermal resistance during post-implantation annealing. Recently, a team led by Prof. Guangping Zheng and Dr. Jiashu Chen from the Department of Mechanical Engineering at The Hong Kong Polytechnic University, in collaboration with Prof. Zhuo Tang’s group from the College of Information Science and Engineering, Hunan University, published a research achievement in Communications Materials (IF=9.6) titled “Deep learning modeling of oxygen redistribution and thermal transport in silicon on insulator and buried oxide layers”. They proposed a computational framework integrating deep neural network potential with molecular dynamics (DFT-MD + DP), systematically addressing the multiscale modeling challenges from oxygen implantation and diffusion to interfacial heat transport.